Leading Edge Blanking(LEB),Each tume the power MOSFET is switched on

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Q: Leading Edge Blanking(LEB)
- l% @7 V* U- ?& Z6 d! m* A9 DEach tume the power MOSFET is switched on,a turn-on spike occurs across the sensing resistor.To avoid premature termination of the swithching pulse,an internal leading edge blanking circuit is built.During this blanking period(250ns,typical),the current limiting comparator is disablbed and connot swith off the gate driver.Thus,conventional RC filering is not necesssary and the propagation delay of current limit protection can be minimized.怎么翻译呢?
- o7 C9 X$ [# a0 l1 M: y! NA:专业的工程师一般能看明白意思，虽然不一定说得清楚。外行翻译肯定要变味。
2 t6 [! r% M* X6 k- V4 D& o% v1 ^2 u每一次的功率MOSFET开关，都感应/检测发生在电阻器上的导通尖峰。为了提前避免终止开关脉冲。在内部建立领先的边缘消隐电路。改消隐期间（250ns，典型），限流比较器被禁用，无法切断棚极驱动器。因此，传统的RC滤波是没有必要的，可以电流限制保护和最小化的延迟传播。